Application of Dynamic Power Regulation in High-Voltage Power Supplies for Etching Equipment

Precise control of energy output enables the art of micro-world sculpting.
In the semiconductor manufacturing and precision processing fields, etching processes are crucial for determining device performance and yield. The high-voltage power supply, acting as the power heart of etching equipment, directly influences etching precision, uniformity, and efficiency through its dynamic power regulation capabilities.
As advanced processes evolve toward the nanometer scale, the requirements for etching precision have become increasingly stringent. The dynamic regulation performance of high-voltage power supplies has emerged as a key technology for enhancing etching process levels.
I. Technical Principles of Dynamic Power Regulation
The dynamic power regulation system of high-voltage power supplies typically consists of three core modules: the sensor monitoring module, the intelligent control module, and the high-power radio frequency (RF) output module.
The sensor monitoring module provides accurate process status information to the control system by collecting real-time parameters such as plasma impedance, optical emission spectroscopy, and reflected power. The intelligent control module uses this real-time data with advanced algorithms to generate control commands for precise adjustment of the power output.
The high-power RF output module employs a multi-stage amplification architecture and rapid response design, enabling microsecond-level response to control commands for accurate power output. This technical architecture allows the power supply system to adapt to various complex scenarios in etching processes, such as changes in process chamber conditions, variations in wafer load, and sudden disturbances.
II. Implementation Methods of Dynamic Regulation
Modern high-voltage power supplies for etching equipment primarily achieve dynamic power regulation through three methods:
Multi-zone (Multi-zone Collaborative Control Technology) divides the electrode into zones, each equipped with an independent power regulation unit. By individually controlling the output power of each zone, it compensates for etch rate differences between the wafer edge and center, improving within-wafer uniformity to within ±1.5%.
(Adaptive Impedance Matching Technology) dynamically adjusts matching network parameters by detecting changes in load impedance in real time, ensuring efficient power coupling into the plasma and increasing power transfer efficiency to over 90%.
(Rapid Pulse Modulation Technology) is suitable for special processes like deep silicon etching. It enables precise control of etching and passivation processes through power modulation at high frequencies (up to 150kHz), effectively improving profile accuracy in high-aspect-ratio structures.
III. Process Improvements from Dynamic Regulation
Dynamic power regulation technology has brought significant improvements to etching processes:
(Improved Within-Wafer Uniformity) is a primary advantage of multi-zone power control. Studies show that edge coupling control technology can reduce edge effects by 40%, maintaining wafer critical dimension uniformity (CDU) within 3%.
(Reduced Feature Damage) is achieved by precisely controlling ion energy. Dynamic power regulation avoids wafer overheating and device damage caused by excessive power, which is particularly important for sensitive structures like shallow junction devices.
(Increased Production Efficiency) is demonstrated through shorter process stabilization times and faster chamber readiness. Intelligent power supply systems can automatically adjust parameters based on process recipes, minimizing batch-to-batch variations and enhancing stability in mass production.
IV. Intelligent Monitoring and Closed-Loop Control
Modern high-voltage power supply systems integrate  (multiple real-time monitoring methods), including optical emission spectroscopy, quadrupole mass spectrometry, and ellipsometry. These methods can collect data thousands of times per second, providing decision-making basis for power regulation.
(Intelligent Algorithms) are the core of dynamic regulation. Machine learning-based parameter adjustment models can predict process trends and preemptively compensate with power adjustments. Fuzzy logic algorithms can respond to chamber state changes within 10ms, enabling rapid dynamic impedance matching.
(Closed-Loop Control Architecture) ensures consistent and reproducible etching processes by continuously comparing monitoring data with process targets and automatically adjusting power output parameters, forming a measurement-decision-execution control loop.
V. Summary and Outlook
Dynamic power regulation technology for high-voltage power supplies has become a standard feature in advanced etching equipment. By precisely controlling power output, it significantly enhances etching precision and uniformity. With the development of artificial intelligence and Internet of Things technologies, future high-voltage power supplies will become more intelligent, enabling advanced functions such as cross-platform collaborative optimization and predictive maintenance.
Furthermore, as semiconductor device structures evolve toward 3D stacking, the requirements for power control precision in etching power supplies will increase. Dynamic power regulation technology will continue to advance to meet the needs of future micro-nano manufacturing.