Ion Implantation High-Voltage Power Supply for Spatial Uniformity Regulation of Ion Beam Distribution

Ion implantation is a fundamental process in semiconductor device fabrication and advanced material surface modification. The uniformity of the ion beam’s spatial distribution directly affects doping accuracy, junction depth control, and material property consistency. The high-voltage power supply serves as the energy source for the acceleration and focusing electrodes, determining the beam’s kinetic energy and trajectory stability. Therefore, precise control of the power supply output is essential to achieve spatial uniformity of the ion beam.
Uniformity deviation often originates from field distortion, space charge effects, or temporal voltage fluctuations. The regulation strategy begins with implementing a high-precision voltage stabilization system combined with a real-time feedback loop. By continuously monitoring the beam current density across different spatial regions using a multi-point Faraday cup array, the system can compute deviations in the electric field and apply rapid voltage corrections via PID-based digital controllers. The power supply must maintain a ripple below 0.01% and respond in microseconds to compensate for beam drift dynamically.
To further enhance control accuracy, a multi-channel high-voltage configuration is employed, providing independent control for each acceleration and focusing electrode. This allows fine-tuning of local field gradients, minimizing edge effects and beam divergence. The design integrates synchronous soft-switching mechanisms to prevent transient potential differences between channels, ensuring stable operation under variable beam loading conditions.
Thermal and magnetic perturbations are additional challenges that may cause electrode potential drift. The power system incorporates temperature-compensated reference circuits and magnetic shielding to maintain long-term voltage stability. In modern ion implantation systems, digital adaptive algorithms analyze real-time beam profiles and automatically adjust power output parameters to sustain beam uniformity. Through precise electrical control and intelligent compensation, the high-voltage power supply enables stable, uniform, and reproducible ion implantation, improving wafer yield and process repeatability.