Intelligent Gradient Regulation Technology for Ion Implantation High-Voltage Power Supplies

As a core process in semiconductor manufacturing, ion implantation precision directly determines device electrical performance and yield. Traditional high-voltage power supplies face two critical challenges in ion implantation: abrupt energy transitions causing non-uniform dopant distribution in transitional zones, and manual parameter adjustments that cannot meet the precision requirements of advanced nodes. Intelligent gradient regulation technology revolutionizes this field by dynamically controlling the output characteristics of high-voltage power supplies, achieving controllable and self-optimizing implantation processes.
Technical Principle Analysis 
The core innovation lies in establishing a three-dimensional voltage-current-time control model. By real-time monitoring of beam current stability (fluctuation ≤±0.5%), target temperature (control accuracy ±1℃), and vacuum pressure (≤10⁻⁵Pa level) combined with preset implantation models (e.g., Pearson-IV distribution), deep learning algorithms predict optimal gradient profiles. When transitioning implantation energy from 50keV to 80keV, the system generates non-linear transition paths (e.g., Sigmoid function curves) instead of traditional step jumps. This slashes transition time to under 200ms while containing concentration fluctuations within ±2%.
Key Innovations 
1. Adaptive Resonance Suppression 
   For parasitic oscillations during high-voltage ramping (typical 65kV/30kW), FFT frequency-domain analysis dynamically adjusts IGBT driving frequency. Combined with magnetically coupled compensation networks, resonance amplitude drops from 15% to below 3%.
  
2. Process Closed-Loop Optimization 
   Integrated beam current monitoring triggers gradient curve reconstruction within 100μs when current density deviation exceeds threshold (±5%). Experiments show this reduces threshold voltage (Vth) batch variation in 28nm processes from 40mV to 15mV.
3. Fourth-Order Gradient Synchronization 
   Beyond monotonic gradients, quad-stage control enables precision in ultra-shallow junction implantation (5nm node): rapid initial rise (10kV/ms) breaks surface barriers → moderated slope (3kV/ms) controls junction depth → plateau ensures uniformity → exponential decay (τ=50ms) minimizes end-range damage. Junction depth conformity reaches 98.7%.
Application Validation 
In SiC power device manufacturing: 
• Implantation depth standard deviation decreases from 12nm to 3.2nm 
• Post-anneal activation rate increases by 28% to 82% 
• Energy utilization efficiency improves 35% (vs. traditional PID control)
Industrial Value 
This technology transforms ion implantation from preset parameter execution to dynamic process optimization. For FinFET and GAA structures, it addresses non-uniform sidewall doping (original deviation >20%). As wide-bandgap semiconductors advance, it demonstrates unique advantages in controlling SiC interface defects (reduced to 10¹⁰cm⁻² levels).
With Industry 4.0 integration, intelligent gradient regulation is becoming a critical breakthrough for semiconductor equipment localization. Its modular design (ISO/IEC/IEEE 21451 compliant) extends applicability to plasma etching and PV coating, accelerating high-end equipment independence.