Technical Evolution and Application Value of Multi-Electrode Collaborative Power Supply for Electrostatic Chuck High-Voltage Systems

In semiconductor manufacturing, the adsorption stability of electrostatic chucks (E-Chucks) directly impacts wafer processing precision and yield. As wafer sizes increase (e.g., 12 inches and above) and process nodes advance to the nanoscale, traditional single-electrode power supply modes struggle to meet the demand for high-uniformity adsorption. Multi-electrode collaborative power supply technology, enabled by dynamic voltage regulation across distributed electrode structures, has emerged as a core solution for enhancing electrostatic chuck performance. 
1. Technical Challenges in Multi-Electrode Collaboration
1. Adsorption Fluctuations Due to Temperature Drift 
   The output voltage of high-voltage power supplies for electrostatic chucks is highly sensitive to temperature. Studies show that a 10°C ambient temperature fluctuation can cause a 0.15% voltage drift in conventional power supplies, increasing local wafer detachment risks by 42%. In multi-electrode systems, temperature response variations between electrodes exacerbate adsorption non-uniformity, affecting etching or deposition uniformity. 
2. Phase Synchronization and Load Matching 
   Multi-electrode systems require independent control of positive/negative polarity voltages while maintaining phase synchronization in vacuum or plasma environments. However, the dielectric constant of gases changes with temperature (Δε/ΔT≈0.05%/°C), causing dynamic fluctuations in the equivalent capacitive load of each electrode. If collaborative response delays exceed 200μs, adsorption force fluctuations may worsen from ±0.8% to ±5%. 
3. Performance Limits of High-Dielectric Materials 
   Ceramic dielectric layers in electrostatic chucks must balance high dielectric constants (for charge storage) and high breakdown strength (for high-voltage resistance). For example, adding barium titanate (BaTiO₃) to alumina-based ceramics improves dielectric properties, but material purity and microstructural consistency directly affect electric field distribution uniformity across multiple electrodes. 
2. Innovative Solutions for Multi-Electrode Collaboration
1. Dynamic Impedance Matching Technology 
   An FPGA-controlled LC matching network monitors load phase angles (±0.1° precision) and adjusts resonant frequencies within 200μs upon detecting capacitive load fluctuations. This reduces voltage phase differences between electrodes to near zero, suppressing adsorption force fluctuations to within ±0.8%—even in high-frequency-switching plasma environments. 
2. Second-Order Curvature Temperature Compensation 
   To counter temperature drift, a compensation circuit combining PTAT (positive temperature coefficient) and CTAT (negative temperature coefficient) currents reduces the temperature coefficient of reference voltage sources from 35ppm/°C to 3ppm/°C. Coupled with thermistor feedback networks, this limits multi-electrode output voltage drift to <0.005% within 25–100°C, ensuring collaboration stability at the device level. 
3. Application of Wide-Bandgap Semiconductor Devices 
   Gallium nitride (GaN)-based power devices leverage high electron mobility and low thermal resistance to minimize switching losses and improve power density. The absence of reverse recovery in GaN HEMTs supports polarity switching within 10ms, meeting the rapid response requirements of bipolar electrodes. 
3. Future Development Directions
1. Digital Twin Models for Multi-Physics Field Coupling 
   Simulation systems integrating electric, thermal, and stress fields can predict multi-electrode behavior under varying process parameters, enabling preemptive compensation. For example, edge computing optimizes real-time voltage distribution to mitigate micron-level wafer displacement caused by thermal deformation. 
2. Third-Generation Semiconductors and Advanced Packaging 
   GaN/SiC power modules with dual-side cooling packages (e.g., PDFN) enhance power density in 800V high-voltage systems. Applying multi-layer SiP technology to intermediate bus converters (IBC) further reduces transmission losses in multi-electrode power delivery. 
Conclusion
Multi-electrode collaborative power supply technology is driving electrostatic chucks toward high-stability, nano-scale precision through material innovation, circuit optimization, and intelligent control. As wide-bandgap semiconductors and digital twins mature, multi-electrode systems may achieve temperature-agnostic control in 3D IC packaging and compound semiconductor manufacturing, positioning them as a core driver of next-generation semiconductor equipment.