Application and Breakthrough of Multi-Pulse Dynamic Synchronization Technology for High-Voltage Power Supplies in Ion Implantation

In the evolution of advanced semiconductor manufacturing processes, ion implantation serves as the core technology for achieving precise doping, and its accuracy directly determines the electrical performance and yield of chips. As the energy core of ion implantation systems, high-voltage power supplies (HVPS) need to provide stable and controllable high-voltage pulses for ion sources. The multi-pulse dynamic synchronization technology is a key breakthrough to address timing deviations in traditional pulse power supply and improve doping uniformity, playing an irreplaceable supporting role in ion implantation processes for advanced manufacturing nodes of 7nm and below.
Traditional HVPS for ion implantation adopt a fixed-timing pulse output mode, which has two major limitations: first, microsecond-level deviations tend to occur between the pulse trigger signal and the ion beam transmission rhythm, leading to ion implantation dose fluctuations exceeding ±3%—a level that fails to meet the strict doping accuracy requirements of advanced chips; second, dynamic load changes (such as fluctuations in ion source plasma density and impedance variations in the beam transmission path) further amplify synchronization errors, causing abnormal local doping concentrations and even chip functional failure in severe cases. The core value of multi-pulse dynamic synchronization technology lies in realizing millisecond-level response and nanosecond-level synchronization between high-voltage pulses and ion beam movement through real-time sensing, dynamic adjustment, and precise calibration.
The implementation of this technology relies on the collaborative operation of three core modules: first, the real-time monitoring unit, which synchronously collects signals of high-voltage pulse amplitude, ion beam current intensity, and transmission speed through a high-frequency sampling circuit (sampling rate ≥1GS/s), constructing a multi-dimensional parameter matrix to provide a data foundation for synchronization adjustment; second, the adaptive adjustment algorithm, which establishes a load disturbance model based on monitoring data. By using a hybrid algorithm combining PID and fuzzy control, it real-time modifies the pulse trigger delay and amplitude compensation, ensuring the time difference between pulse output and ion beam arrival is controlled within 5ns; third, the timing calibration unit, which generates dynamic trigger signals using a field-programmable gate array (FPGA). Through hardware-level timing compensation, it offsets transmission line delays and device response differences, avoiding the lag caused by software-only adjustment.
In practical applications, the value of multi-pulse dynamic synchronization technology is reflected in three aspects: first, it improves the uniformity of ion implantation dose to within ±0.8%, meeting the doping accuracy needs of advanced structures such as gate-all-around (GAA) transistors; second, by dynamically adapting to changes in ion source operating conditions, the HVPS maintains stable synchronization within the output range of 1kV-100kV, expanding the application scenarios of ion implantation processes; third, it reduces energy loss between pulses by approximately 15%, aligning with the low-power trend in semiconductor manufacturing. In the future, as ion implantation systems develop toward higher beam intensity and faster switching speeds, multi-pulse dynamic synchronization technology will further evolve toward sub-nanosecond synchronization and multi-channel collaborative control, becoming a key technology supporting the continuous breakthrough of semiconductor manufacturing processes.